HYDROGEN-MEDIATED CREATION AND ANNIHILATION OF STRAIN IN AMORPHOUS-SILICON

Authors
NICKEL NH JACKSON WB
Citation
Nh. Nickel et Wb. Jackson, HYDROGEN-MEDIATED CREATION AND ANNIHILATION OF STRAIN IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 51(8), 1995, pp. 4872-4881
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
8
Year of publication
1995
Pages
4872 - 4881
Database
ISI
SICI code
0163-1829(1995)51:8<4872:HCAAOS>2.0.ZU;2-0