LOCATION OF DEUTERIUM ON THE SILICON (100) MONOHYDRIDE SURFACE DETERMINED BY TRANSMISSION ION CHANNELING

Authors
WAMPLER WR
Citation
Wr. Wampler, LOCATION OF DEUTERIUM ON THE SILICON (100) MONOHYDRIDE SURFACE DETERMINED BY TRANSMISSION ION CHANNELING, Physical review. B, Condensed matter, 51(8), 1995, pp. 4998-5004
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
8
Year of publication
1995
Pages
4998 - 5004
Database
ISI
SICI code
0163-1829(1995)51:8<4998:LODOTS>2.0.ZU;2-8