USE OF THE 2-DIMENSIONAL TLM METHOD IN THE ELECTROMAGNETIC SIMULATIONOF THIN SEMICONDUCTOR SAMPLES

Authors
DINDO SF NEY MM HARRISON RG
Citation
Sf. Dindo et al., USE OF THE 2-DIMENSIONAL TLM METHOD IN THE ELECTROMAGNETIC SIMULATIONOF THIN SEMICONDUCTOR SAMPLES, International journal of numerical modelling, 8(2), 1995, pp. 77-94
Citations number
23
Categorie Soggetti
Computer Application, Chemistry & Engineering","Mathematical Method, Physical Science","Engineering, Eletrical & Electronic
Journal title
International journal of numerical modelling → ACNP
ISSN journal
08943370
Volume
8
Issue
2
Year of publication
1995
Pages
77 - 94
Database
ISI
SICI code
0894-3370(1995)8:2<77:UOT2TM>2.0.ZU;2-B
Abstract
A two-dimensional lossy shunt TLM node is incorporated into a TLM syst em and adapted to model for the first time the Maxwell field equations in thin semiconductor samples. Both the characteristics of the node a nd the TLM system itself are fully described. By considering a paralle l-plate structure containing a thin GaAs sample, driven by a voltage s ource, it is shown, with an example, that this TLM technique can simul ate the response of non-stationary electromagnetic fields in a semicon ductor to applied excitations.