VACANCIES AND DOMINANT ELECTRICALLY ACTIVE DEFECTS IN BULK SEMIINSULATING GAAS

Authors
BROZEL MR CORBEL C
Citation
Mr. Brozel et C. Corbel, VACANCIES AND DOMINANT ELECTRICALLY ACTIVE DEFECTS IN BULK SEMIINSULATING GAAS, Journal de physique. IV, 5(C1), 1995, pp. 63-72
Citations number
38
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
5
Issue
C1
Year of publication
1995
Pages
63 - 72
Database
ISI
SICI code
1155-4339(1995)5:C1<63:VADEAD>2.0.ZU;2-7
Abstract
Positron Annihilation techniques have been used to investigate two imp ortant defects that occur naturally in semi-insulating (SI) Gallium ar senide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.