DEFECT-INDUCED AMORPHIZATION IN SILICON

We present the first tight-binding molecular-dynamics simulation of th e defect-induced crystal-to-amorphous transition in crystalline silico n. The process is studied by monitoring the response of the crystal la ttice to a random insertion of self-interstitial defects. Both structu ral and electronic properties are investigated and a comparison to amo rphous silicon as obtained by quenching from the melt is presented. Fi nally, we study the effects of the post-implantation thermal annealing on the implanted sample.