AN ULTRA-LOW NOISE 50-GHZ-BAND AMPLIFIER MMIC USING AN ALGAAS INGAAS PSEUDOMORPHIC HEMT/

Authors
KASHIWA T KATOH T YOSHIDA N MINAMI H KITANO T KOMARU M TANINO N
Citation
T. Kashiwa et al., AN ULTRA-LOW NOISE 50-GHZ-BAND AMPLIFIER MMIC USING AN ALGAAS INGAAS PSEUDOMORPHIC HEMT/, IEICE transactions on electronics, E78C(3), 1995, pp. 318-321
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E78C
Issue
3
Year of publication
1995
Pages
318 - 321
Database
ISI
SICI code
0916-8524(1995)E78C:3<318:AUN5AM>2.0.ZU;2-J
Abstract
An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB w ith an associated gain of 8.1 dB is achieved at 50 GHz. The noise figu re is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-t he-art noise figure for low noise amplifiers around 50 GHz. The succes s of this LNA development came from the excellent HEMT and MMIC techno logies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GH z to 60 GHz is obtained.