PRESSURE INFLUENCE ON THE DIAMOND DEPOSITION DOMAIN FROM VARIOUS C-H-O(-AR)-CONTAINING GASEOUS-MIXTURES

Plasma volume can be increased through the addition of rare gas or by using low pressures. The influence of these deposition conditions on t he diamond growth from C-H-O-(Ar)-containing gas mixtures was studied in a classical microwave plasma reactor. The morphology, grain size, g rowth rate and uniformity of diamond films were investigated by SEM an d their quality was deduced by micro-Raman and SIMS studies. Their var iations with different gaseous compositions and pressures are reported and discussed. It is especially shown that low pressures decrease the film quality and the diamond deposition domain. However, pressures in the range 2-5 Torr could be employed for mechanical applications, for example.