MODELING OF GAAS P-I-N PHOTODIODES AND N-P-N PHOTOTRANSISTORS UNDER HIGH ILLUMINATION CONDITIONS

Authors
WOODS SJ WILSON SP WALKER AB
Citation
Sj. Woods et al., MODELING OF GAAS P-I-N PHOTODIODES AND N-P-N PHOTOTRANSISTORS UNDER HIGH ILLUMINATION CONDITIONS, International journal of optoelectronics, 10(6), 1995, pp. 473-477
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
International journal of optoelectronics → ACNP
ISSN journal
09525432
Volume
10
Issue
6
Year of publication
1995
Pages
473 - 477
Database
ISI
SICI code
0952-5432(1995)10:6<473:MOGPPA>2.0.ZU;2-1
Abstract
The effects of optical illumination on GaAs p-i-n photodiodes and n-p- n phototransistors are modelled in one dimension by Monte Carlo and dr ift diffusion models. We show that there is good agreement between the two approaches for steady and pulsed illumination and elucidate diffi culties encountered when modelling the n-p-n phototransistor by a drif t diffusion model.