Jm. Heaton et al., MMIC COMPATIBLE GAAS ALGAAS ELECTROOPTIC WAVE-GUIDE MODULATORS AND SWITCHES FOR MICROWAVE APPLICATIONS/, International journal of optoelectronics, 10(6), 1995, pp. 479-488
We describe the design, fabrication and measured performance of GaAs/A
lGaAs p-i-n electro-optic waveguide Mach-Zehnder modulators and switch
es designed to operate at frequencies up to 10 GHz. We have concentrat
ed on making compact single-electrode and double-electrode (push-pull)
devices using a processing method optimized to give a high yield. The
modulators were made using MOCVD epitaxy, on a semi-insulating wafer,
and reactive ion etching to form deep-etched guides and MMI couplers.
Each device was electrically isolated by further etching, and RF conn
ections were made using second-level plated metal lines over polyimide
. We present results of on-wafer measured S-11 parameters against freq
uency for different device designs, and demonstrate the advantages of
the push-pull configuration. We also present measured S-21 parameters
against frequency for a free-space optical RF link made using a push-p
ull modulator.