A UNIFIED MODEL FOR THE VERTICAL BASE WIDENING EFFECT IN SILICON BIPOLAR-TRANSISTOR AT 77 AND 300 K

Authors
XIAO ZX WEI TL
Citation
Zx. Xiao et Tl. Wei, A UNIFIED MODEL FOR THE VERTICAL BASE WIDENING EFFECT IN SILICON BIPOLAR-TRANSISTOR AT 77 AND 300 K, International journal of electronics, 82(1), 1997, pp. 1-7
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
82
Issue
1
Year of publication
1997
Pages
1 - 7
Database
ISI
SICI code
0020-7217(1997)82:1<1:AUMFTV>2.0.ZU;2-P
Abstract
In this paper, a unified model for the vertical base widening effect a nd the Kirk current density of a silicon bipolar transistor is propose d which is appropriate for any electric field intensity at low tempera ture.