ELECTRICAL-PROPERTIES OF BASNO3 IN SUBSTITUTION OF ANTIMONY FOR TIN AND LANTHANUM FOR BARIUM

Polycrystalline materials of BaSn1-xSbxO3-delta and Ba1-yLaySnO3-delta were prepared. Substitutional solubilities of antimony for tin and la nthanum for barium, respectively, in BaSnO3 were obtained to be x=0.18 for BaSn1-xSbxO3-delta and y < 0.052 for Ba1-yLaySnO3-delta. The X-ra y photoemission spectroscopy measurements showed the valence of antimo ny and tin is mixed in our samples of BaSn1-xSbxO3-delta. At lower tem perature, magnetic susceptibilities of BaSn1-xSbxO3-delta and Ba1-yLay SnO3-delta satisfy the Curie law, indicating the existence of non-inte racting localized electrons at the Sn4+ site, and forming a Sn4+ +e(-) state in these systems. By substitution of antimony and lanthanum in BaSnO3, the conductive properties are semiconductor-like. To explain t his conductive behaviour, three types of mechanism were taken into con sideration.