HIGH-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAN, INN, AND ALN

Authors
SHUL RJ KILCOYNE SP CRAWFORD MH PARMETER JE VARTULI CB ABERNATHY CR PEARTON SJ
Citation
Rj. Shul et al., HIGH-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAN, INN, AND ALN, Applied physics letters, 66(14), 1995, pp. 1761-1763
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
14
Year of publication
1995
Pages
1761 - 1763
Database
ISI
SICI code
0003-6951(1995)66:14<1761:HEEOGI>2.0.ZU;2-B