ENHANCED REAL-SPACE ELECTRON-TRANSFER IN CHARGE INJECTION TRANSISTORSWITH SOURCE-CHANNEL HETEROJUNCTIONS FORMED BY GRADED ALXGA1-XAS LAYERAND SHALLOW PD GE OHMIC CONTACTS/

Authors
LAI JT LEE JYM
Citation
Jt. Lai et Jym. Lee, ENHANCED REAL-SPACE ELECTRON-TRANSFER IN CHARGE INJECTION TRANSISTORSWITH SOURCE-CHANNEL HETEROJUNCTIONS FORMED BY GRADED ALXGA1-XAS LAYERAND SHALLOW PD GE OHMIC CONTACTS/, Applied physics letters, 66(14), 1995, pp. 1779-1781
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
14
Year of publication
1995
Pages
1779 - 1781
Database
ISI
SICI code
0003-6951(1995)66:14<1779:EREICI>2.0.ZU;2-N