INTEGRATION PROCESS FOR PHOTONIC INTEGRATED-CIRCUITS USING PLASMA DAMAGE-INDUCED LAYER INTERMIXING

Authors
OOI BS BRYCE AC MARSH JH
Citation
Bs. Ooi et al., INTEGRATION PROCESS FOR PHOTONIC INTEGRATED-CIRCUITS USING PLASMA DAMAGE-INDUCED LAYER INTERMIXING, Electronics Letters, 31(6), 1995, pp. 449-451
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
449 - 451
Database
ISI
SICI code
0013-5194(1995)31:6<449:IPFPIU>2.0.ZU;2-V
Abstract
A new quantum-well intermixing process in GaAs/AlGaAs structures, base d on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as lo w as 18 dB cm(-1) have been measured in the passive waveguides of the extended-cavity lasers.