GAINAS GAAS QUANTUM-WIRE LASER STRUCTURES WITH STRONG GAIN COUPLING DEFINED BY REACTIVE ION ETCHING/

Authors
ORTH A ZULL H REITHMAIER JP FORCHEL A
Citation
A. Orth et al., GAINAS GAAS QUANTUM-WIRE LASER STRUCTURES WITH STRONG GAIN COUPLING DEFINED BY REACTIVE ION ETCHING/, Electronics Letters, 31(6), 1995, pp. 457-458
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
457 - 458
Database
ISI
SICI code
0013-5194(1995)31:6<457:GGQLSW>2.0.ZU;2-7
Abstract
Gain-coupled GaInAs/GaAs quantum wire lasers have been realised with w ire widths down to 70nm by low-damage dry etching. Very strong gain mo dulation has been achieved by etching through the active layers. The o ptically pumped laser structures show singlemode operation at 77K.