PRODUCIBLE GAAS-BASED MOVPE-GROWN VERTICAL-CAVITY TOP-SURFACE EMITTING LASERS WITH RECORD PERFORMANCE

The authors present state-of-the-art performance obtained from produci ble, 850nm, current-guided GaAs/AlGaAs, top-emitting vertical-cavity s urface-emitting lasers (VCSELs). Record CW room-temperature device per formance includes threshold voltages V-th = 1.55V, submilliamp thresho ld currents I-th= 0.68mA, unbonded CW output power P-cw = 59mW, total wallplug efficiencies of eta(wp) = 28% and CW lasing to T-cw = 200 deg rees C. These results were obtained from the same fabrication processe s and similar epigrowth designs, which exhibited 99.8% device yield ac ross a 3 ''-diameter metal organic vapour phase epitaxy (MOVPE)-grown wafer.