DELTA-DOPING-ENHANCED INGAAS INALAS HETEROBARRIER DIODES/

Authors
CERNIANSKY M ALLSOPP DWE HOPKINSON M
Citation
M. Cerniansky et al., DELTA-DOPING-ENHANCED INGAAS INALAS HETEROBARRIER DIODES/, Electronics Letters, 31(6), 1995, pp. 493-494
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
493 - 494
Database
ISI
SICI code
0013-5194(1995)31:6<493:DIIHD>2.0.ZU;2-K
Abstract
Modification of the effective conduction-band offset in InGaAs/ InAlAs isotype heterojunctions by incorporating, during epitaxial growth, a doping dipole formed by alternate n(+), p(+) delta (delta-) doping is demonstrated. Greatly improved current rectification is found when the dipole polarity enhances the potential barrier.