DUAL-CHANNEL EST BRT - A NEW HIGH-VOLTAGE MOS-GATED THYRISTOR STRUCTURE/

Authors
SRIDHAR S BALIGA BJ
Citation
S. Sridhar et Bj. Baliga, DUAL-CHANNEL EST BRT - A NEW HIGH-VOLTAGE MOS-GATED THYRISTOR STRUCTURE/, Electronics Letters, 31(6), 1995, pp. 494-496
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
494 - 496
Database
ISI
SICI code
0013-5194(1995)31:6<494:DEB-AN>2.0.ZU;2-M
Abstract
A new MOS-gated thyristor structure, in which a BRT section is incorpo rated into the dual-channel EST (DC-EST) to enhance maximum controllab le current densities, is presented. This structure has been demonstrat ed experimentally to have a maximum controllable current density about 2.5 times greater than that of the DC-EST, with only a small increase in the on-state voltage drop.