EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS

Authors
STOJADINOVIC N PEJOVIC M GOLUBOVIC S RISTIC G DAVIDOVIC V DIMITRIJEV S
Citation
N. Stojadinovic et al., EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS, Electronics Letters, 31(6), 1995, pp. 497-498
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
497 - 498
Database
ISI
SICI code
0013-5194(1995)31:6<497:EOROCO>2.0.ZU;2-3
Abstract
It is shown that radiation-induced oxide-trapped charge contributes to an increase in mobility in p-channel MOSFETs. A new scattering mechan ism involving retardation or surface-roughness scattering due to oxide -trapped charge is proposed in order to explain the observed mobility increase. ,