MID-INFRA-RED INGAAS LIGHT-EMITTING-DIODES FOR OPTICAL GAS-SENSING GROWN ON LATTICE-MISMATCHED SUBSTRATES

Authors
GRIETENS B MURTI MR VANHOOF C BORGHS G
Citation
B. Grietens et al., MID-INFRA-RED INGAAS LIGHT-EMITTING-DIODES FOR OPTICAL GAS-SENSING GROWN ON LATTICE-MISMATCHED SUBSTRATES, Electronics Letters, 31(6), 1995, pp. 502-503
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
502 - 503
Database
ISI
SICI code
0013-5194(1995)31:6<502:MILFOG>2.0.ZU;2-F
Abstract
InGaAs/InAlAs light-emitting diodes were grown on lattice-mismatched G aAs substrates by molecular beam epitaxy, This makes it possible to tu ne the emission to the desired wavelength by changing the composition of the grown layers. Our diodes exhibit efficient room-temperature emi ssion at 1.9 mu m, necessary for optical sensing of water vapour.