SIMPLE RECONCILIATION MOSFET MODEL VALID IN ALL REGIONS

Authors
TSIVIDIS Y SUYAMA K VAVELIDIS K
Citation
Y. Tsividis et al., SIMPLE RECONCILIATION MOSFET MODEL VALID IN ALL REGIONS, Electronics Letters, 31(6), 1995, pp. 506-508
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
6
Year of publication
1995
Pages
506 - 508
Database
ISI
SICI code
0013-5194(1995)31:6<506:SRMMVI>2.0.ZU;2-H
Abstract
A single-expression MOSFET model is proposed. The model is related to a recently published one, but includes explicitly the threshold voltag e at any value of the source-substrate bias. Very good accuracy in all regions, including moderate inversion, is demonstrated. The model red uces to well established expressions in particular regions.