Am. Rashed et A. Sadek, A NOVEL OXIDE VERTICAL MOSFET (OVMOS) TRANSISTOR STRUCTURE, Arabian journal for science and engineering, 19(4B), 1994, pp. 873-879
A novel high-density oxide vertical MOS (OVMOS) transistor with compac
t structure has been developed for future MOS devices. This transistor
, whose gate electrode surrounds only two sides of the pillar silicon
island, reduces the occupied area for all kinds of circuits. More than
70% of the occupied area can be saved with the new structure, which w
ill be suitable for future ULSI's. Other advantages are steep cut-off
characteristics (low subthreshold swing S = 73 mV/decade) and small su
bstrate bias effects. Also the channel length of OVMOS is independent
on the technology linewidth and high performance could be achieved wit
h OVMOS circuits for any scale of integration.