A NOVEL OXIDE VERTICAL MOSFET (OVMOS) TRANSISTOR STRUCTURE

A novel high-density oxide vertical MOS (OVMOS) transistor with compac t structure has been developed for future MOS devices. This transistor , whose gate electrode surrounds only two sides of the pillar silicon island, reduces the occupied area for all kinds of circuits. More than 70% of the occupied area can be saved with the new structure, which w ill be suitable for future ULSI's. Other advantages are steep cut-off characteristics (low subthreshold swing S = 73 mV/decade) and small su bstrate bias effects. Also the channel length of OVMOS is independent on the technology linewidth and high performance could be achieved wit h OVMOS circuits for any scale of integration.