Two-photon absorption (TPA) at 532 nm was investigated in BGO (Bi12GeO
20) single crystals using a 16 ps pulse width Nd:YAG laser. The TPA co
efficient was measured to be 2.2-2.6 cm/GW for undoped BGO. This sugge
sts that nonlinear absorption plays a significant role in the carrier
generation processes induced by short laser pulses. The TPA coefficien
t for heavily Al-doped EGO is only slightly smaller (1.9-2.3 cm/GW) th
an that of the undoped EGO. This result has specific importance since
linear absorption in the visible wavelength region is strongly suppres
sed by Al doping.