OPTICAL CHARACTERIZATION AND ELECTRONIC ENERGY-LEVEL STRUCTURE OF ER3-DOPED CSCDBR3()

Citation
Jr. Quagliano et al., OPTICAL CHARACTERIZATION AND ELECTRONIC ENERGY-LEVEL STRUCTURE OF ER3-DOPED CSCDBR3(), The Journal of chemical physics, 105(22), 1996, pp. 9812-9822
Citations number
29
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
ISSN journal
00219606
Volume
105
Issue
22
Year of publication
1996
Pages
9812 - 9822
Database
ISI
SICI code
0021-9606(1996)105:22<9812:OCAEES>2.0.ZU;2-0
Abstract
Information obtained from optical absorption, excitation, and emission experiments on erbium doped crystalline CsCdBr3 is analyzed, using a semiempirical Hamiltonian, to calculate atomic and crystal-field inter action parameters and electronic state wave functions. A majority of t he Er3+ ions substitute at a Cd2+ site giving C-3 upsilon point group symmetry and forming and Er3+ ion dimer center. This dimerization, tog ether with the material's low phonon energies, and the specific positi oning of states in the Er3+ (4f(11)) configuration, produce the intere sting and useful emission properties of the material. Comparisons are made with other erbium halide crystals, and interaction parameter and energy-level results for Nd3+: CsCdBr3 are also presented. The inclusi on of second order correlation crystal-field interaction parameters is shown to be essential for accurately characterizing splittings of sev eral J multiplets important in visible emission pathways. (C) 1996 Ame rican Institute of Physics.