MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS

Authors
JOYCE BA SHITARA T FAHY MR SATO K NEAVE JH FAWCETT PN KAMIYA I ZHANG XM
Citation
Ba. Joyce et al., MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 87-97
Citations number
36
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
30
Issue
2-3
Year of publication
1995
Pages
87 - 97
Database
ISI
SICI code
0921-5107(1995)30:2-3<87:MOLGDM>2.0.ZU;2-H
Abstract
This paper reviews our present understanding of particular aspects of the surface processes involved in the growth of epitaxial semiconducto r films by molecular beam epitaxy. Emphasis is placed on adatom migrat ion and incorporation on GaAs (001) substrates during the growth of Ga As, a comparison with equivalent growth effects on (110) and (111)A or iented substrates, and the influence of mismatch and substrate orienta tion on growth mode and strain relaxation in the InAs/GaAs system. A b rief indication of surface segregation behaviour is also included.