THE EFFECT OF PRESSURE ON THE LUMINESCENCE OF CDTE CDMNTE QUANTUM-WELLS/

We have studied photoluminescence in two CdTe/Cd1-xMnxTe multiple quan tum-well samples with well thicknesses from 9.7 Angstrom to 100 Angstr om and with barrier compositions x = 0.5 and x = 0.68. The following e ffects have been observed after hydrostatic pressure up to 3 GPa was a pplied: (i) decrease of the luminescence intensity from wider wells, w hich can be related to the stress-induced deterioration of initially s trained CdTe layers; (ii) transfer of photoexcited electrons from thin ner wells into the barriers where Mn-related recombination occurs; (ii i) large negative pressure coefficient (approximate to-80 meV/GPa) of the Mn-related photoluminescence; and (iv) positive pressure coefficie nts for CdTe well luminescence, which do not practically depend on the well thickness, while their magnitude decreases with increasing Mn co ncentration in the barriers (75 meV/GPa for Cd0.50Mn0.50Te and 60 meV/ GPa for Cd0.32Mn0.68Te).