STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE

Authors
NELMES RJ MCMAHON MI WRIGHT NG ALLAN DR LIU H LOVEDAY JS
Citation
Rj. Nelmes et al., STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 539-543
Citations number
25
Categorie Soggetti
Physics, Condensed Matter",Chemistry
Journal title
Journal of physics and chemistry of solids → ACNP
ISSN journal
00223697
Volume
56
Issue
3-4
Year of publication
1995
Pages
539 - 543
Database
ISI
SICI code
0022-3697(1995)56:3-4<539:SSOIAG>2.0.ZU;2-U
Abstract
Extensive new structural results on II-VI, III-V and group IV semicond uctors under pressure have been obtained over the past two years at SR S Daresbury, using angle-dispersive techniques and an image-plate dete ctor. In this paper, a brief overview is presented of recent work on S i, Ge, GaSb, InSb, InAs, InP and GaAs.