Jl. Robert et al., DETERMINATION OF THE ENERGETICAL SEPARATION OF DX STATES IN GAAS AND IN ALAS BY USING PLANAR-DOPED SUPERLATTICES, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 615-618
We present Hall measurements performed in Si-doped GaAs-AlAs short per
iod superlattices under hydrostatic pressure. The planar doping techni
que allows us to isolate the DX(0) state in GaAs layers and the DX(3)
state in AlAs layers. The period of the superlattice was adjusted to m
ake the DX(0) level resonant in the conduction miniband and the DX(3)
level in the gap of the superlattice. By applying hydrostatic pressure
s up to 12 kbars, we determined the energetical shift between the two
states to be around 130 meV.