DETERMINATION OF THE ENERGETICAL SEPARATION OF DX STATES IN GAAS AND IN ALAS BY USING PLANAR-DOPED SUPERLATTICES

Authors
ROBERT JL SELLITTO P GOUGAM A SICART J PLANEL R
Citation
Jl. Robert et al., DETERMINATION OF THE ENERGETICAL SEPARATION OF DX STATES IN GAAS AND IN ALAS BY USING PLANAR-DOPED SUPERLATTICES, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 615-618
Citations number
20
Categorie Soggetti
Physics, Condensed Matter",Chemistry
Journal title
Journal of physics and chemistry of solids → ACNP
ISSN journal
00223697
Volume
56
Issue
3-4
Year of publication
1995
Pages
615 - 618
Database
ISI
SICI code
0022-3697(1995)56:3-4<615:DOTESO>2.0.ZU;2-V
Abstract
We present Hall measurements performed in Si-doped GaAs-AlAs short per iod superlattices under hydrostatic pressure. The planar doping techni que allows us to isolate the DX(0) state in GaAs layers and the DX(3) state in AlAs layers. The period of the superlattice was adjusted to m ake the DX(0) level resonant in the conduction miniband and the DX(3) level in the gap of the superlattice. By applying hydrostatic pressure s up to 12 kbars, we determined the energetical shift between the two states to be around 130 meV.