Ga. Samara et al., PRESSURE AS A PROBE OF DEEP LEVELS AND DEFECTS IN SEMICONDUCTORS - ANTISITES AND OXYGEN CENTERS IN GAAS, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 625-629
The effects of temperature and hydrostatic pressure on the electron th
ermal emission rates and capture cross-sections of EL2 and EL3 in GaAs
and on the conductivity of Sb-doped GaAs were studied. The results yi
elded the pressure dependences of the energies of the associated deep
levels, allowed evaluation of the breathing mode lattice relaxations a
ccompanying carrier emission or capture by these levels and revealed t
rends which lead to new insights. The results are discussed in terms o
f models for the responsible defects.