PRESSURE AS A PROBE OF DEEP LEVELS AND DEFECTS IN SEMICONDUCTORS - ANTISITES AND OXYGEN CENTERS IN GAAS

The effects of temperature and hydrostatic pressure on the electron th ermal emission rates and capture cross-sections of EL2 and EL3 in GaAs and on the conductivity of Sb-doped GaAs were studied. The results yi elded the pressure dependences of the energies of the associated deep levels, allowed evaluation of the breathing mode lattice relaxations a ccompanying carrier emission or capture by these levels and revealed t rends which lead to new insights. The results are discussed in terms o f models for the responsible defects.