EFFECT OF RAPID THERMAL ANNEALING ON THE STRAIN RELAXATION IN HEAVILYBORON-DOPED SILICON EPITAXIAL LAYER

Authors
WANG JB XU Q YUAN J LU F SUN HH WANG X
Citation
Jb. Wang et al., EFFECT OF RAPID THERMAL ANNEALING ON THE STRAIN RELAXATION IN HEAVILYBORON-DOPED SILICON EPITAXIAL LAYER, Journal of applied physics, 77(7), 1995, pp. 2974-2977
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
7
Year of publication
1995
Pages
2974 - 2977
Database
ISI
SICI code
0021-8979(1995)77:7<2974:EORTAO>2.0.ZU;2-G