FIELD-EFFECT TRANSISTORS BASED ON POLY(P-PHENYLENE VINYLENE) DOPED BYION-IMPLANTATION

Citation
K. Pichler et al., FIELD-EFFECT TRANSISTORS BASED ON POLY(P-PHENYLENE VINYLENE) DOPED BYION-IMPLANTATION, Journal of applied physics, 77(7), 1995, pp. 3523-3527
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
77
Issue
7
Year of publication
1995
Pages
3523 - 3527
Database
ISI
SICI code
0021-8979(1995)77:7<3523:FTBOPV>2.0.ZU;2-C