EXPERIMENTAL-EVIDENCE FOR STATISTICAL-INHOMOGENEOUS DISTRIBUTED DOPANT ATOMS IN A SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

Authors
MIZUNO T TORIUMI A
Citation
T. Mizuno et A. Toriumi, EXPERIMENTAL-EVIDENCE FOR STATISTICAL-INHOMOGENEOUS DISTRIBUTED DOPANT ATOMS IN A SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Journal of applied physics, 77(7), 1995, pp. 3538-3540
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
7
Year of publication
1995
Pages
3538 - 3540
Database
ISI
SICI code
0021-8979(1995)77:7<3538:EFSDD>2.0.ZU;2-3