KINETIC OF THE GROWTH OF CHEMICALLY ETCHED POROUS SILICON

Citation
G. Difrancia et A. Citarella, KINETIC OF THE GROWTH OF CHEMICALLY ETCHED POROUS SILICON, Journal of applied physics, 77(7), 1995, pp. 3549-3551
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
77
Issue
7
Year of publication
1995
Pages
3549 - 3551
Database
ISI
SICI code
0021-8979(1995)77:7<3549:KOTGOC>2.0.ZU;2-0