GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON

Authors
ARTACHO E LIZONNORDSTROM A YNDURAIN F
Citation
E. Artacho et al., GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON, Physical review. B, Condensed matter, 51(12), 1995, pp. 7862-7865
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
12
Year of publication
1995
Pages
7862 - 7865
Database
ISI
SICI code
0163-1829(1995)51:12<7862:GAQDOI>2.0.ZU;2-2