CAPTURE OF CARRIERS INTO A GAAS ALGAAS QUANTUM-WELL RELEVANCE TO LASER PERFORMANCE/

An experimental and theoretical study of the carrier capture time into a semiconductor quantum well is presented. Oscillations of the phonon emission induced capture time are experimentally observed and good ag reement with theory is found. The calculations show that not only the LO-phonon emission induced capture time (ph-capture) oscillates as a f unction of well width, but also the carrier-carrier scattering induced capture time (c-c capture) oscillates by more than one order of magni tude as a function of the active layer design. Recently it has been sh own that the carrier capture time is directly related to the modulatio n band width in a quantum well laser. As a result, it might be possibl e to tailor the modulation band width by optimizing the capture effici ency using a proper design of the active layer in a quantum well laser .