CONTROLLED SPONTANEOUS EMISSION FROM SEMICONDUCTOR MICROCAVITIES

The advantages of the simultaneous quantum manipulation of electron an d photon systems due to quantum-confined Stark effect and cavity quant um electrodynamics, respectively, in semiconductor microstructures are clarified, manifesting systematic experimental results on high transf er efficiencies of spontaneous emissions and cavity-induced fractional changes of exciton decay times around on-axis resonance. The scheme f or the simultaneous quantum manipulation is also expected to lead to a ttractive device concepts for highly efficient, high-speed spontaneous light emitters, and sub-Poissonian photon generators in a short time interval.