LATERAL QUANTIZATION EFFECTS IN THE LUMINESCENCE OF INGAAS INP QUANTUM WIRES/

Cw and time-resolved luminescence spectra of InGaAs/InP quantum wires with lateral extensions down to 10 nm are investigated. The luminescen ce of the wires shows a shift to higher energy as well as features due to transitions of up to four lateral subbands when the wire width is reduced to less than 50 nm. Time-resolved studies with subpicosecond t ime resolution indicate that the typical relaxation times for resonant ly excited carriers in the wires are below 10 ps. If the laser is pola rized perpendicular to the wires the direct absorption in the wires is suppressed. This is used to study the population of the wires by carr ier capture from the unpatterned InP buffer layer. The wire width vari ation of the capture times suggests the formation of a barrier in the InP sections of the wires due to lateral quantization.