LINEAR-POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN OPENINGAAS INP QUANTUM-WELL WIRES/

Citation
Na. Gippius et al., LINEAR-POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN OPENINGAAS INP QUANTUM-WELL WIRES/, Physica status solidi. b, Basic research, 188(1), 1995, pp. 269-273
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
188
Issue
1
Year of publication
1995
Pages
269 - 273
Database
ISI
SICI code
0370-1972(1995)188:1<269:LOPARI>2.0.ZU;2-#
Abstract
The photoluminescence and Raman scattering intensities of InGaAs/InP q uantum well wires with wire widths L(x) between 10 nm and 1 mu m are s trongly polarized parallel to the wire axis. This effect is mainly due to the spatial redistribution of the electric component of the electr omagnetic field in the vicinity of the quantum wire.