Na. Gippius et al., LINEAR-POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN OPENINGAAS INP QUANTUM-WELL WIRES/, Physica status solidi. b, Basic research, 188(1), 1995, pp. 269-273
The photoluminescence and Raman scattering intensities of InGaAs/InP q
uantum well wires with wire widths L(x) between 10 nm and 1 mu m are s
trongly polarized parallel to the wire axis. This effect is mainly due
to the spatial redistribution of the electric component of the electr
omagnetic field in the vicinity of the quantum wire.