DEPHASING OF ACCEPTOR-BOUND EXCITONS IN II-VI SEMICONDUCTORS

Citation
B. Lummer et al., DEPHASING OF ACCEPTOR-BOUND EXCITONS IN II-VI SEMICONDUCTORS, Physica status solidi. b, Basic research, 188(1), 1995, pp. 493-505
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
188
Issue
1
Year of publication
1995
Pages
493 - 505
Database
ISI
SICI code
0370-1972(1995)188:1<493:DOAEII>2.0.ZU;2-E
Abstract
Degenerate four-wave-mixing experiments (DFWM) at the neutral acceptor bound exciton complex in CdS and ZnSe are reported. ps- as well as fs -spectroscopy are carried out to investigate the dephasing processes a t this complex. The results are discussed concerning scattering of fre e excitons, phonons, and interactions with impurity centers. Higher or ders of diffraction in the DFWM process are modeled within the density matrix equations for noninteracting two-level systems including propa gation effects. From nonlinear quantum beat spectroscopy tile binding energies of the acceptor bound biexciton in CdS and ZnSe are estimated .