Amorphous gallium arsenide films have been deposited on polycrystallin
e molybdenum and amorphous glass substrates heated at temperatures as
high as 600 degrees C using rf sputtering. This has been achieved by o
perating at lower self-bias voltages when the substrate temperature is
increased. The effect of the self-bias voltage on the crystallographi
c structure of the films is discussed in terms of the kinetic energy o
f the particles bombarding the growing film. Measurements of the chemi
cal composition of the films using electron microprobe analysis show t
hat films deposited on molybdenum substrates are stoichiometric at a s
ubstrate temperature of 400 degrees C.