HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAAS

Amorphous gallium arsenide films have been deposited on polycrystallin e molybdenum and amorphous glass substrates heated at temperatures as high as 600 degrees C using rf sputtering. This has been achieved by o perating at lower self-bias voltages when the substrate temperature is increased. The effect of the self-bias voltage on the crystallographi c structure of the films is discussed in terms of the kinetic energy o f the particles bombarding the growing film. Measurements of the chemi cal composition of the films using electron microprobe analysis show t hat films deposited on molybdenum substrates are stoichiometric at a s ubstrate temperature of 400 degrees C.