INFLUENCE OF THE CURRENT-DENSITY AND INTERNAL ELECTRIC-FIELD ON THE EXCLUSION OF EXCESS CARRIERS IN LONG SEMICONDUCTOR SAMPLES

Authors
PULTORAK J SIKORSKI S JUNG W
Citation
J. Pultorak et al., INFLUENCE OF THE CURRENT-DENSITY AND INTERNAL ELECTRIC-FIELD ON THE EXCLUSION OF EXCESS CARRIERS IN LONG SEMICONDUCTOR SAMPLES, Semiconductor science and technology, 10(4), 1995, pp. 395-404
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
395 - 404
Database
ISI
SICI code
0268-1242(1995)10:4<395:IOTCAI>2.0.ZU;2-U
Abstract
Long, exponentially inhomogeneous germanium structures with two l-h ju nctions are used as modulators of infrared radiation working in the ex clusion regime. An analysis of excess current carrier transport in the se structures in conditions of an internal electric field is given. Ty pical distributions of excess carriers and current-voltage characteris tics are calculated and presented.