POLARIZATION EFFECTS IN SEMICONDUCTOR SUPERLATTICES

Authors
KORBUTYAK DV LITOVCHENKO VG TROSHCHENKO LV KRYLYUK SG GRAHN HT PLOOG K
Citation
Dv. Korbutyak et al., POLARIZATION EFFECTS IN SEMICONDUCTOR SUPERLATTICES, Semiconductor science and technology, 10(4), 1995, pp. 422-424
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
422 - 424
Database
ISI
SICI code
0268-1242(1995)10:4<422:PEISS>2.0.ZU;2-H
Abstract
The polarization dependence of the photoluminescence of GaAs-AlAs supe rlattices with different well and barrier widths has been investigated . In wide-well superlattices (10-15 nm) the luminescence signal of fre e excitons has the largest degree of polarization (20-25%). In short-p eriod superlattices, however, the recombination is dominated by indire ct, localized excitons (X-Gamma), which are exposed to anisotropic per turbations along the [110] crystallographic axis. This results in an a nomalous detection angle dependence of the polarization.