BIAS AND TEMPERATURE-DEPENDENT PHOTOCURRENT SPECTROSCOPY OF A COMPRESSIVELY STRAINED GAINP ALGAINP SINGLE-QUANTUM-WELL/

Photocurrent (pc) spectroscopy, as a function of temperature and appli ed voltage, of a compressively strained 100 Angstrom Ga0.44In0.56P/(Al 0.5Ga0.5)(0.52)In0.48P single quantum well reveals (a) the quantum-con fined Stark effect for heavy- and light-hole excitons and a parity-for bidden exciton transition at 200 K and (b) evidence for carrier recomb ination dominating over carrier escape at moderate to low temperature, i.e. less than or equal to 200 K and at small applied bias. However, a PC can be observed at low temperature with a large reverse bias (sim ilar to 10 V), indicating an inhibition of the recombination process d ue to spatial separation of electrons and holes.