APPLICATION OF POLARIZATION RESOLVED PHOTOLUMINESCENCE TO THE STUDY OF QUANTUM-WELL INTERMIXING IN INGAASP SYSTEMS

Authors
YANG JA ELENKRIG BB CASSIDY DT BRUCE DM TEMPLETON IM
Citation
Ja. Yang et al., APPLICATION OF POLARIZATION RESOLVED PHOTOLUMINESCENCE TO THE STUDY OF QUANTUM-WELL INTERMIXING IN INGAASP SYSTEMS, Semiconductor science and technology, 10(4), 1995, pp. 483-488
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
483 - 488
Database
ISI
SICI code
0268-1242(1995)10:4<483:AOPRPT>2.0.ZU;2-R
Abstract
A room-temperature spatially resolved and polarization resolved photol uminescence (PL) technique is demonstrated to be a useful tool for stu dying the intermixing process in InGaAsP multiple-quantum-well systems disordered by focused ion beam implantation. This technique produces maps of the spectral uniformity, degree of polarization, and PL yield at room temperature. Information on spectral shift (i.e., bandgap chan ge) and anisotropy in the implanted region can be obtained from these maps. A significant enhancement in pi yield (up to 40%) for Si+ implan ted line patterns was observed.