ZINC DIFFUSION IN INP FROM SPIN-ON FILMS OF VARIOUS ZINC CONCENTRATIONS

Authors
LAUTERBACH C
Citation
C. Lauterbach, ZINC DIFFUSION IN INP FROM SPIN-ON FILMS OF VARIOUS ZINC CONCENTRATIONS, Semiconductor science and technology, 10(4), 1995, pp. 500-503
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
500 - 503
Database
ISI
SICI code
0268-1242(1995)10:4<500:ZDIIFS>2.0.ZU;2-Y
Abstract
SiO2 spin-on films of various concentrations of 1, 2, 6, 22 and 36 at. % zinc have been fabricated and used for the p diffusion into undoped n-type InP. An increasing zinc concentration (N-0) of the spin-on film leads to a higher atomic zinc concentration (N-Zn) and diffusion dept h in InP. From the experimental results a distribution coefficient N-Z n/N-0 of 0.012 has been determined. A higher atomic zinc concentration in InP results in a lower acceptor concentration. With additional hea t treatment the electrical activity of zinc can be increased significa ntly.