THE USE OF GA2SE3 AND GA2S3 AS DONOR DOPING SOURCES FOR MBE-GROWN ALXGA1-XSB AND ALXGA1-XAS

The first results obtained with a use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1-xS b (0 less than or equal to x less than or equal to 1) on GaSb and GaAs substrates and AlxGa1-xAs (0 less than or equal to x less than or equ al to 0.4) are reported. In GaAs, free electron concentrations obtaine d when incorporating the donors from these sources can be easily contr olled up to a maximum of 5 x 10(18) cm(-3). For AlxGa1-xSb it was poss ible to compensate the high concentration of native accepters and obta in n-type of conductivity over the full composition range of the alloy . For GaSb maximum free electron concentrations were 6 x 10(17) cm(-3) and 5 x 10(16) cm(-3) for selenium and sulphur elements respectively.