DETECTION AND EVALUATION OF SELF-HEATING EFFECTS IN N(-XAS DEVICES BYNOISE TEMPERATURE-MEASUREMENTS()NN(+) ALXGA1)

Authors
DEMURCIA M RICHARD E PERRAUDIN JM BOYER A BENVENUTI A ZIMMERMANN J
Citation
M. Demurcia et al., DETECTION AND EVALUATION OF SELF-HEATING EFFECTS IN N(-XAS DEVICES BYNOISE TEMPERATURE-MEASUREMENTS()NN(+) ALXGA1), Semiconductor science and technology, 10(4), 1995, pp. 515-522
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
515 - 522
Database
ISI
SICI code
0268-1242(1995)10:4<515:DAEOSE>2.0.ZU;2-Z
Abstract
We have investigated self-heating effects in AlGaAs devices influencin g hot electron noise temperature measurements. A technique for estimat ing the temperature change of the structure under test submitted to a high pulsed electric field has been developed. Simulation (electrical and thermal) results are satisfactorily compared with experimental dat a.