SEM EVIDENCE FOR NEAR-SURFACE CARRIER PASSIVATION BY HYDROGEN IN CH4 H-2 REACTIVE ION ETCHED P-INP/

Authors
GROMOVA TI DAVYDOVA EI USPENSKII MB SHISHKIN VA
Citation
Ti. Gromova et al., SEM EVIDENCE FOR NEAR-SURFACE CARRIER PASSIVATION BY HYDROGEN IN CH4 H-2 REACTIVE ION ETCHED P-INP/, Semiconductor science and technology, 10(4), 1995, pp. 536-539
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
536 - 539
Database
ISI
SICI code
0268-1242(1995)10:4<536:SEFNCP>2.0.ZU;2-N
Abstract
Scanning electron microscope (SEM) observations of carrier electrical activity passivation were carried out on cleaved surfaces of CH4/H-2 r eactive ion etched Zn-doped p-InP. SEM images are considered as qualit ative confirmation of hydrogen passivation in p-InP.