SCHOTTKY-BARRIER HEIGHTS OF IR P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS/

Authors
NUR O SARDELA MR WILLANDER M TURAN R
Citation
O. Nur et al., SCHOTTKY-BARRIER HEIGHTS OF IR P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS/, Semiconductor science and technology, 10(4), 1995, pp. 551-555
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
4
Year of publication
1995
Pages
551 - 555
Database
ISI
SICI code
0268-1242(1995)10:4<551:SHOIPA>2.0.ZU;2-E
Abstract
Low barrier height Schottky diodes, Ir/p-Si and Ir/p-Si1-xGex, with x = 14%, have been investigated using current-voltage (I-V) analysis. Th e crystalline quality, the Ge fraction and the strain state of the Si1 -xGex alloy were investigated using a high-resolution multicrystal x-r ay diffractometer. The Schottky barrier height of the Ir/strained p-Si 0.86Ge0.14 junction was found to be 70 meV smaller than that of the Ir /p-Si junction. The relationship between this barrier height differenc e and the energy band structure of Si/strained Si1-xGex is discussed.