PHOTOCURRENT SPECTROSCOPY IN N-I-N GAAS AL.3GA.7AS SHORT-PERIOD SUPERLATTICE/

Authors
LIGONZO T AUGELLI V MINAFRA A CAPOZZI V MARTIN D FAVIA P LORUSSO GF
Citation
T. Ligonzo et al., PHOTOCURRENT SPECTROSCOPY IN N-I-N GAAS AL.3GA.7AS SHORT-PERIOD SUPERLATTICE/, Solid state communications, 94(6), 1995, pp. 429-433
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
94
Issue
6
Year of publication
1995
Pages
429 - 433
Database
ISI
SICI code
0038-1098(1995)94:6<429:PSINGA>2.0.ZU;2-K
Abstract
Photocurrent spectra of a 50 angstrom period superlattice (SL) of GaAs /Al3Ga7As, were measured in the range 14-300 K in a low electric field regime. The energy gap between the heavy-hole and electron extended s tates of the SL shows the same dependence on temperature as its bulk c omponents. The decrease of photocurrent in the range 100-300 K indicat es transport in the extended states of the SL. Different photo-ionizat ion of DX centres existing in the n-doped layers of Al3Ga7As causes an effective asymmetry in the n-i-n structure.